General Purpose and Low VCE(sat) Transistors | 2N5191

4.0 A，60 V，NPN 双极功率晶体管

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该 4A，80 V，NPN 双极功率晶体管适用于功率放大器和开关电路应用。此晶体管具有绝佳安全区域限值，是 PNP 2N5194、2N5195 的补充

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Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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fT Min (MHz)

PTM Max (W)

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2N5191

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

0.6

4

60

-

-

-

-

25

100

2

40

Price N/A

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2N5191G

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CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

0.6

4

60

60

5

-

1.2

25

100

2

40

$0.3423

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可靠性数据

Die Related Summary Data

Device: 2N5191G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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