General Purpose and Low VCE(sat) Transistors | 2N5192

4.0 A，80 V，NPN 双极功率晶体管

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该 4A，80 V，NPN 双极功率晶体管适用于功率放大器和开关电路应用。此晶体管具有绝佳安全区域限值，是 PNP 2N5194、2N5195 的补充

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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2N5192

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CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

0.6

4

80

-

-

-

-

20

80

2

40

Price N/A

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2N5192G

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CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

0.6

4

80

80

5

-

1.2

20

80

2

40

$0.3819

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可靠性数据

Die Related Summary Data

Device: 2N5192G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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