General Purpose and Low VCE(sat) Transistors | 2N5684

50 A, 80 V PNP Bipolar Power Transistor

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The Power 50A 80 V Bipolar NPN Transistor is designed for use in high power amplifier and switching circuit applications.

  • High Current Capability - IC Continuous = 50 Amperes.
  • DC Current Gain - hFE = 15-60 @ IC = 25 Adc
  • Low Collector?Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
  • Pb-Free Packages are Available

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2N5684G

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Pb

A

H

P

TO-204-2 / TO-3-2

197A-05

NA

0

FTRAY

100

N

PNP

General Purpose

1

50

80

80

5

2

2

15

60

2

300

$9.5192

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可靠性数据

Die Related Summary Data

Device: 2N5684G

Equivalent to wafer fab process: BPT

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平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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