2N5884

25 A，80 V，PNP 双极功率晶体管

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CAD模型

概览

该 25A，80 V， NPN 双极功率晶体管适用于通用功率放大器和开关应用。

特性

Low Collector-Emitter Saturation Voltage
V_CE(sat) = 1.0 Vdc, (max) at I_C = 15 Adc
Low Leakage Current
I_CEX = 1.0 mAdc (max) at Rated Voltage
Excellent DC Current Gain
h_FE = 20 (min) at I_C = 10 Adc
High Current Gain Bandwidth Product
f_t = 4.0 MHz (min) at I_C = 1.0 Adc
Pb-Free Packages are Available

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Polarity

Type

V_CE(sat) Max (V)

I_C Cont. (A)

V_CEO Min (V)

V_CBO (V)

V_EBO (V)

V_BE(sat) (V)

V_BE(on) (V)

h_FE Min

h_FE Max

f_T Min (MHz)

P_TM Max (W)

Reference Price

2N5884G

Obsolete

TO-204-2

1-07

FTRAY

100

PNP

General Purpose

2.5

1.5

100

200

Price N/A

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General Purpose and Low VCE(sat) Transistors | 2N5884

25 A，80 V，PNP 双极功率晶体管

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