4.0 A, 60 V NPN Darlington Bipolar Power Transistor

Obsolete

概览

The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

  • High DC Current Gain -
    hFE = 2000 (Typ) @ IC = 2.0 Adc
  • Collector-Emitter Sustaining Voltage - @ 100 mAdc
    VCEO(sus) = 60 Vdc (Min) - 2N6035, 2N6038
    VCEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039
  • Forward Biased Second Breakdown Current Capability
    IS/b = 1.5 Adc @ 25 Vdc
  • Monolithic Construction with Built-in Base-Emitter
    Resistors to Limit Leakage Multiplication
  • Space-Saving High Performance-to-Cost Ratio
    TO-225AA Plastic Package
  • Pb-Free Packages are Available

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

Obsolete

CAD Model

Pb

A

H

P

TO-225-3

NA

0

BLKBX

500

N

NPN

4

60

2

0.75

15

25

Price N/A

More Details

Obsolete

CAD Model

Pb

A

H

P

TO-225-3

NA

0

BLKBX

500

N

NPN

4

60

2

0.75

15

25

Price N/A

More Details

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