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2N6341: 25 A, 150 V NPN Bipolar Power Transistor

Overview
Specifications
Datasheet: High-Power NPN Silicon Transistors
Rev. 12 (144.0kB)
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Product Overview
产品说明
The Power 25A 150 V Bipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications.
特性
 
  • High Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 Vdc (Min) 2N6338
    VCEO(sus) = 150 Vdc (Min) - 2N6341
  • High DC Current Gain
    hFE = 30 - 120 @ IC = 10 Adc
    hFE = 12 (Min) @ IC = 25 Adc
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
  • Fast Switching Times @ IC = 10 Adc
    tr = 0.3 µs (Max)
    ts = 1.0 µs (Max)
    tf = 0.25 µs (Max)
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
技术文档及设计资源
仿真模型 (4) 封装图纸 (1)
数据表 (1)  
供货情况和样品
产品
状况
Compliance
具体说明
封装
MSL*
容器
预算价格 (1千个数量的单价)
类型
外形
类型
数量
2N6341G Active
Pb-free
25 A, 150 V NPN Bipolar Power Transistor TO-204-2 1-07 NA Tray Foam 100 $7.9198
表面贴装器件的潮湿敏感度等级(MSL)(260°C回流温度时测量无铅,235°C回流温度时测量含铅)
市场订货至交货的时间(周) : 8 to 12
Digikey   (2015-07-09) : <1K
Mouser   (2015-07-09) : <100
ON Semiconductor   (2015-07-08) : 100
PandS   (2015-07-09) : <1K
Datasheet: High-Power NPN Silicon Transistors
Rev. 12 (144.0kB)
»查看材料成分
»产品更改通知 (4)
Product Overview

Product Compliance Status Description Polarity IC Continuous (A) V(BR)CEO Min (V) hFE Min hFE Max fT Min (MHz) PTM Max (W) Package Type
 Pb-free   Active     25 A, 150 V NPN Bipolar Power Transistor   NPN   25   150   30   120   40   200   TO-204-2 
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