2N6667

10 A，60 V PNP 达林顿双极功率晶体管

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CAD模型

概览

该 8 A，60 V PNP 达林顿双极功率晶体管适用于通用放大器和低速开关应用。

特性

High DC Current Gain h_FE = 3500 (Typ) @ I_C = 4 Adc
Collector-Emitter Sustaining Voltage @ 200 mAdc V_CEO(sus) = 60 Vdc (Min) 2N6667 V_CEO(sus) = 80 Vdc (Min) - 2N6668
Low Collector-Emitter Saturation Voltage V_CE(sat) = 2 Vdc (Max) @ I_C = 5 A
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
Complementary to 2N6387, 2N6388 Figure 1. Darlington Schematic

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Polarity

I_C Continuous (A)

V_(BR)CEO Min (V)

V_CE(sat) Max (V)

h_FE Min (k)

h_FE Max (k)

f_T Min (MHz)

Reference Price

2N6667

Obsolete

TO-220-3

221A

TUBE

PNP

Price N/A

2N6667G

Obsolete

TO-220-3

221A

TUBE

PNP

Price N/A

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Darlington Transistors | 2N6667

10 A，60 V PNP 达林顿双极功率晶体管

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