Darlington Transistors | 2N6667

10 A，60 V PNP 达林顿双极功率晶体管

Obsolete

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概览

该 8 A，60 V PNP 达林顿双极功率晶体管适用于通用放大器和低速开关应用。

  • High DC Current Gain hFE = 3500 (Typ) @ IC = 4 Adc
  • Collector-Emitter Sustaining Voltage @ 200 mAdc VCEO(sus) = 60 Vdc (Min) 2N6667 VCEO(sus) = 80 Vdc (Min) - 2N6668
  • Low Collector-Emitter Saturation Voltage VCE(sat) = 2 Vdc (Max) @ IC = 5 A
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • TO-220AB Compact Package
  • Complementary to 2N6387, 2N6388 Figure 1. Darlington Schematic

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2N6667

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

10

60

2

1

20

20

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2N6667G

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

10

60

2

1

20

20

Price N/A

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可靠性数据

Die Related Summary Data

Device: 2N6667G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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