N沟道增强模型场效应晶体管

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N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 2Ω

  • This product is general usage and suitable for many different applications.
  • 双N沟道数字MOSFET
  • 低导通电阻
  • 低栅极阈值电压
  • 低输入电容
  • 快速开关速度
  • 低输入/输出泄漏
  • 超小型表面贴装封装
  • 无铅设计/符合RoHS标准

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状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

2N7002V

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Active

CAD Model

Pb

A

H

P

SOT-563

1

260

REEL

3000

N

60

Q1=Q2=2000

N-Channel

Dual

±20

2.5

0.28

0.25

-

Q1=Q2=7500

-

-

37.8

$0.1319

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