General Purpose and Low VCE(sat) Transistors | BC858CDXV6

PNP Bipolar Transistor

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This PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low power surface mount applications.

  • These are Pb-Free Devices

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BC858CDXV6T1G

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CAD Model

Pb

A

H

P

SOT-563

463A-01

1

260

REEL

4000

N

Dual PNP

General Purpose

0.3

0.1

30

30

5

0.7

0.6

420

800

100

0.357

$0.0273

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可靠性数据

Die Related Summary Data

Device: BC858CDXV6T1G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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