Darlington Transistors | BDV65B

10 A，100 V NPN 达林顿双极功率晶体管

Obsolete

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概览

此 10 A，100 V NPN 双极功率晶体管用作互补通用放大器应用中的输出器件。BDV65B (NPN) 和 BDV64B (PNP) 为互补器件。

  • High DC Current Gain HFE = 1000 (min.) @ 5 Adc
  • Monolithic Construction with Built-in Base Emitter Shunt Resistors
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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状态

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Case Outline

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MSL Temp (°C)

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Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

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BDV65B

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CAD Model

Pb

A

H

P

SOT-93-3 / TO-218-3

340D-02

NA

0

TUBE

30

N

NPN

10

100

2

1

-

-

Price N/A

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BDV65BG

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Obsolete

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CAD Model

Pb

A

H

P

TO-247

340L

NA

0

TUBE

30

N

NPN

10

100

2

1

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: BDV65BG

Equivalent to wafer fab process: BPT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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