Medium Power NPN Darlington Bipolar Power Transistor

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The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

  • High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
  • Collector Emitter Sustaining Voltage @ 100 mAdc
    VCEO(sus) = 80 Vdc (Min) BDX53B, 54B
    VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
    VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available

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BDX53B

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

50

N

NPN

8

80

2

0.75

-

-

Price N/A

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BDX53BG

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Active

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

50

Y

NPN

8

80

2

0.75

-

-

$0.4039

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