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General Purpose and Low VCE(sat) Transistors | BUL45D2
概览
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
- Low Base Drive Requirement
- High Peak DC Current Gain (55 Typical) @ IC = 100 mA
- Extremely Low Storage Time Min/Max Guarantees
Due to the H2BIP Structure which Minimizes the Spread - Integrated Collector-Emitter Free Wheeling Diode
- Fully Characterized and Guaranteed Dynamic VCE(sat)
- "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
- Pb-Free Package is Available
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BUL45D2
Pb
A
H
P
TO-220-3
NA
0
TUBE
50
N
NPN
General Purpose
0.8
5
400
-
-
-
-
22
-
-
75
Price N/A
More Details
BUL45D2G
Pb
A
H
P
TO-220-3
NA
0
TUBE
50
N
NPN
General Purpose
0.8
5
400
700
12
0.8
-
22
-
-
75
$0.9249
More Details
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