General Purpose and Low VCE(sat) Transistors | BUV21
概览
The 40 A, 200 V NPN Bipolar Power Transistor is designed for high speed, high current and high power applications.
- High DC current gain:
hFE min. = 20 at IC = 12 A - Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A
- Very fast switching times: TF max. = 0.4 µs at IC=25A
- Pb-Free Package is Available
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BUV21G
Active
Pb
A
H
P
TO-204-2 / TO-3-2
NA
0
FTRAY
100
Y
NPN
General Purpose
0.6
40
200
250
7
1.5
-
20
60
8
250
$13.3714
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