Digital Transistors (BRTs) | EMF18XV6

Complementary Bipolar Digital Transistor (BRT)

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概览

This dual bipolar transistor is designed for general purpose amplifier applications.

  • TBD

  • TBD

  • Low VCE(sat), <0.25V
  • These are Pb-Free Devices

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Product services, tools and other useful resources related to EMF18XV6

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Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

hFE Min

R1 (kΩ)

R2 (kΩ)

R1/R2 Typ

Vi(off) Max (V)

Vi(on) Min (V)

Reference Price

EMF18XV6T1G

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CAD Model

Pb

A

H

P

SOT-563

463A-01

1

260

REEL

4000

F

Dual NPN BRT & PNP TXR

0.1

50

80

47

47

1

0

0

$0.146

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EMF18XV6T5G

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Obsolete

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CAD Model

Pb

A

H

P

SOT-563

463A-01

1

260

REEL

8000

N

Dual NPN BRT & PNP TXR

0.1

50

80

47

47

1

-

-

Price N/A

More Details

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可靠性数据

Die Related Summary Data

Device: EMF18XV6T5G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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