EMH2801: P-Channel Power MOSFET, -20V, -3A, 85mΩ, Single EMH8 with Schottky Diode
产品说明
EMH2801 is a P-Channel Power MOSFET, -20V, -3A, 85mΩ, Single EMH8 with Schottky Diode for General-Purpose Switching Device Applications.
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特性 |
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Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting
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MOSFET : Low ON-resistance
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SBD : Small switching noise
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SBD : Low forward voltage (IF = 2.0A, VF max = 0.46V)
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新产品 |
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NTP8G206N
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600 V, 150 mΩ单N沟道氮化镓(GaN)共源共栅(Cascode)功率晶体管
NDBA180N10B
NDPL180N10B
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N沟道功率 MOSFET, 100 V, 180 A
- 低至2.8 mΩ 的超低导通电阻
- 低门极电荷(95 nC)和高开关速度
- 提供D2PAK 和 TO-220封装
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