MOSFETs | FCD600N65S3R0

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，6 A，600 mΩ，DPAK

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概览

SUPERFET III MOSFET 是安森美半导体的全新高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的出色性能。此先进技术专用于最大程度降低导通损耗，提供出色的开关性能，并且可以承受极端 dv/dt 速率。因此，SUPERFET III MOSFET Easy drive 系列有助于管理 EMI 问题，实现更轻松的设计实施。

  • Computing
  • Consumer
  • Industrial
  • Notebook / Desktop computer
  • Game Console
  • LCD / LED TV
  • LED Lighting / Ballast
  • Adapter
  • Telecom / Server
  • 700 V @ TJ= 150 oC
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
  • Ultra Low Gate Charge (Typ. Qg = 11 nC)
  • Optimized Capacitance
  • 100% Avalanche Tested
  • RoHS Compliant
  • Typ. RDS(on) = 493 mΩ
  • Internal Gate Resistance: 0.9 Ω

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCD600N65S3R0

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

650

600

N-Channel

Single

30

4.5

6

54

-

-

-

11

465

$0.6717

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