功率 MOSFET,N 沟道,SUPERFET® II,FAST,600 V,10 A,400 mΩ,TO-220F

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SuperFET® II MOSFET 是全新的高压超结 (SJ) MOSFET 系列,利用电荷平衡技术实现出色的低导通电阻,以及更低门极电荷方面的卓越性能。此技术专用于最大程度降低导电损耗,提供卓越的开关性能、dv/dt 速率和更高的雪崩能量。因此,SuperFET II MOSFET 非常适用于开关电源应用,如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。

  • This product is general usage and suitable for many different applications.
  • 650V @TJ = 150°C
  • 最大值 RDS(on) = 400mΩ
  • 超低栅极电荷(典型值 Qg = 28nC )
  • 低有效输出电容(典型值 Coss.eff = 90pF )
  • 100% 经过雪崩击穿测试

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCPF400N60

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

N

600

400

N-Channel

Single

DC: ±20, AC: ±30

3.5

10

31

-

-

-

28

1180

$1.1482

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