P 沟道,PowerTrench® MOSFET,2.5V 指定,-20V,-5.8A,30mΩ

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概览

此类 P 沟道 2.5V 指定 MOSFET 是使用安森美半导体先进的 PowerTrench 工艺生产的,特别适用于最大程度降低导通电阻,同时保持低门极电荷,实现卓越的开关性能。此类器件非常适用于电池电源应用:负载开关和电力管理、电池电源电路和 DC/DC 转换。

  • This product is general usage and suitable for many different applications.
  • -5.8A, -20V, RDS(on) = 30mΩ @ VGS = -4.5V RDS(on) = 43mΩ @ VGS = -2.5V
  • 低栅极电荷
  • 高性能沟道技术可实现极低的RDS(on)
  • SuperSOT ¨C6封装: 小尺寸(比标准 SO¨C8 小 72%);薄型(1 mm 厚)

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状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC608PZ

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

-20

-

P-Channel

Single

12

-1.5

-5.8

1.6

43

30

7.2

17

1330

$0.1824

More Details

FDC608PZ-F171

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Last Shipments

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

-20

-

P-Channel

Single

12

-1.5

-5.8

1.6

43

30

7.2

17

1330

Price N/A

More Details

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