双 P 沟道,数字 FET,-25V,0.41A,1.1Ω

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此类双 P 沟道逻辑电平增强型场效应晶体管使用高单元密度的 DMOS 专属工艺生产。这种极高密度工艺特别适用于最大程度降低导通电阻。此器件专用于在低压应用中替代双极数字晶体管和小信号 MOSFET。

  • This product is general usage and suitable for many different applications.
  • -25 V、-0.41 A(连续值)、-1.5 A(峰值)。
  • RDS(ON) = 1.1 Ω @ VGS = 4.5 V,
  • RDS(ON) = 1.5 Ω @ VGS= -2.7 V。
  • 电平栅极驱动要求极低,从而可在3V电路中直接运行(VGS(th)< 1.5 V)。
  • 栅-源齐纳二极管增强耐静电放电(ESD)能力(>6kV人体模型)。
  • 紧凑的工业标准SC70-6表面贴装封装。

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状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDG6304P

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

Y

-25

-

P-Channel

Dual

-8

-1.5

-0.41

0.3

Q1=Q2=1800

Q1=Q2=1100

1.8

1.1

62

$0.1655

More Details

FDG6304P-F169

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Obsolete

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

N

-25

-

P-Channel

Dual

-8

-8

-0.41

0.3

1500

1100

-

-

62

Price N/A

More Details

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