FDMC035N10X1

N 沟道，PowerTrench® MOSFET，100 V，5.5 A，37 mΩ

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概览

此 N 沟道 MV MOSFET 是使用安森美半导体先进的 PowerTrench® 技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻，并且针对热插拔应用进行了优化。

应用

This product is general usage and suitable for many different applications.

特性

Max r_DS(on) = 37 mΩ at V_GS = 10 V, I_D = 5.5 A
Max r_DS(on) = 41 mΩ at V_GS = 6 V, I_D = 5.0 A
Low Profile - 0.8 mm max in Power 33
100% UIL Tested
RoHS Compliant

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMC035N10X1

Last Shipments

PQFN-8

483AX

260

REEL

3000

100

N-Channel

Single

±20

5.5

1910

Price N/A

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MOSFETs | FDMC035N10X1

N 沟道，PowerTrench® MOSFET，100 V，5.5 A，37 mΩ

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