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此 N 沟道 MV MOSFET 是使用安森美半导体先进的 PowerTrench® 技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻,并且针对热插拔应用进行了优化。
如需购买产品或样品,请先登录您的安森美账号。
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
FDMC035N10X1
Last Shipments
Pb
A
H
P
PQFN-8
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
Power 33 (u8FL)
Low-Medium Voltage
Standard
0
Single
0
100
37
±20
4
5.5
50
-
-
50
41
1910
11
58
109
64
Price N/A
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