N 沟道,屏蔽门极,PowerTrench® MOSFET,80 V,147 A,3.1 mΩ

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此 N 沟道 MV MOSFET 使用安森美半导体先进的 PowerTrench® 工艺生产,该工艺结合了屏蔽门极技术。此工艺经过了优化,可最大程度降低导通电阻,同时可保持卓越的开关性能,以及业内最佳的软体二极管。

  • High Performance DC-DC converters
  • AC-DC Synchronous Rectification
  • Motor control
  • Netcom/Telecom
  • AC Adapter
  • Power Tools
  • Low RDS(on) and Qg
  • Very Low Qrr
  • Lowers switching noise / EMI
  • 100% UIL tested

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS003N08C

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CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

80

3.1

N-Channel

Single

20

4

147

2.7

-

8.1

33

52

3820

$3.1823

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