N 沟道,PowerTrench® MOSFET,40V,7.6A,29mΩ

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此类 N 沟道 MOSFET 使用先进的 PowerTrench® 工艺生产,特别适用于最大程度降低导通电阻,同时保持卓越的开关性能。

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  • 舒适与便捷
  • 人体电子
  • 车辆安全系统
  • 其他车用
  • Inverter
  • Power Supplies
  • 7.6 A、40 V RDS(on) = 29 mΩ (VGS = 10 V)
  • 7.6 A, 40V RDS(on) = 36mΩ @ VGS = 4.5V
  • Typical Qg(TOT) = 7.7 nC at VGS = 5 V, ID = 7.6 A
  • 符合 RoHS 标准
  • 符合 AEC Q101

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状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS8449-F085

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Lifetime

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

40

29

N-Channel

Single

±20

3

7.6

5

-

36

15

7.7

760

$0.6622

More Details

FDS8449-F085P

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

40

29

N-Channel

Single

±20

3

-

5

-

36

15

7.7

760

Price N/A

More Details

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