FDS8884

N 沟道 PowerTrench® MOSFET 30V，8.5A，23mΩ

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CAD模型

概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总体效能而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 RDS(ON) 和快速开关。

应用

This product is general usage and suitable for many different applications.

特性

V_GS = 10V，I_D = 8.5A时，最大R_DS(on) = 23mΩ
V_GS = 4.5V，I_D = 7A时，最大r_DS(on) = 30 mΩ
低栅极电荷
100%经过R_G测试
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS8884

Active

SOIC-8

751EB

260

REEL

2500

N-Channel

Single

2.5

8.5

2.5

475

$0.2133

产品型号:

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MOSFETs | FDS8884

N 沟道 PowerTrench® MOSFET 30V，8.5A，23mΩ

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