方案
按技术分类
设计
Small Signal MOSFETs | FDV301N
概览
此 N 沟道逻辑电平增强型场效应晶体管是使用高单元密度的 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻。此器件是专为在低压应用中替代数字晶体管而设计的。因为无需偏置电阻，所以此单 N 沟道 FET 可以替代若干具有各种偏置电阻值的数字晶体管。
应用
- This product is general usage and suitable for many different applications.
特性
- 25 V，0.22 A持续电流，0.5 A峰值电流。 RDS(ON) = 5 Ω @ VGS= 2.7 V，RDS(ON) = 4 Ω @ VGS= 4.5 V。
- 栅极驱动电平要求极低，从而可在3V电路中直接运行。 VGS(th) < 1.5V。
- 栅-源齐纳二极管增强耐静电放电(ESD)能力。 >6kV人体模型。
- Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06
- Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model - Replace multiple NPN digital transistors with one DMOSFET
产品列表
如需购买产品或样品，请先登录您的安森美账号。
搜寻
Close Search
产品:
2
分享
排序方式
产品系列:
┗
可订购器件:
2
产品
FDV301N
Active
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
SOT-23
Small Signal
Logic
0
Single
0
25
-
8
1.06
0.22
0.35
5000
4000
0.49
0.49
9.5
0.07
-
6
1.3
$0.0328
More Details
FDV301N-F169
Last Shipments
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
SOT-23-3/5
Small Signal
Logic
0
Single
0
25
4
8
1.06
0.22
0.35
5000
4
0.49
0.49
9.5
0.07
-
6
1.3
Price N/A
More Details
Show More
1-25 of 25
Products per page
Jump to :
1
向销售发送邮件
Hello, your current browser settings are preventing us from processing your submission. You can adjust your browser settings and reload the page or you can submit an email directly to inside.sales@onsemi.com
You might also try the following:
- Clear your browser cookies
- Try to open this page in anonymous browser window
- Try a different browser
- Make sure you have reliable internet connection
Thank you for submitting the contact sales form. Your request is on its way to our sales support team!
We thank you for your interest in onsemi and are working on your request. Our sales support team will respond to your request within two business days.