N 沟道,数字 FET,25V,0.22A,4Ω

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此 N 沟道逻辑电平增强型场效应晶体管是使用高单元密度的 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻。此器件是专为在低压应用中替代数字晶体管而设计的。因为无需偏置电阻,所以此单 N 沟道 FET 可以替代若干具有各种偏置电阻值的数字晶体管。

  • This product is general usage and suitable for many different applications.
  • 25 V,0.22 A持续电流,0.5 A峰值电流。 RDS(ON) = 5 Ω @ VGS= 2.7 V,RDS(ON) = 4 Ω @ VGS= 4.5 V。
  • 栅极驱动电平要求极低,从而可在3V电路中直接运行。 VGS(th) < 1.5V。
  • 栅-源齐纳二极管增强耐静电放电(ESD)能力。 >6kV人体模型。
  • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06
  • Gate-Source Zener for ESD ruggedness.
    >6kV Human Body Model
  • Replace multiple NPN digital transistors with one DMOSFET

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDV301N

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Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

1

260

REEL

3000

N

25

-

N-Channel

Single

8

1.06

0.22

0.35

5000

4000

1.64

0.49

9.5

$0.0328

More Details

FDV301N-F169

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CAD Model

Pb

A

H

P

SOT-23 (TO-236)

1

260

REEL

3000

N

25

-

N-Channel

Single

8

1.06

0.22

0.35

5000

-

-

-

9.5

Price N/A

More Details

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