方案
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Small Signal MOSFETs | FDV303N
概览
此类 N 沟道增强型场效应晶体管是使用高单元密度的 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻。此器件专为使用一个锂电池或三个镉电池或 NMH 电池的电池电路应用而设计。它可在手机和寻呼机等紧凑型便携式电子设备中用作反相器，或者高效的微型分立 DC/DC 转换。此器件具有卓越的导通电阻性能，即使在低至 2.5V 的门极驱动电压中亦是如此。
应用
- This product is general usage and suitable for many different applications.
特性
- • 25 V，0.68 A 连续电流，2 A 峰值。
- RDS(ON) = 0.45 Ω @ VGS= 4.5 V
- RDS(ON) = 0.6 Ω @ VGS= 2.7 V
• 栅极驱动电平要求极低，从而可在 3 V 电路中直接运行。 VGS(th) < 1.0 V。
• 栅-源齐纳二极管增强耐静电放电(ESD)能力。 >6kV人体模型。
• 紧凑型工业标准 SOT-23 表面贴装封装。
• TN0200T 和 TN0201T 的备选方案。 - Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V
- Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
- Compact industry standard SOT-23 surface mount package
- Alternative to TN0200T and TN0201T
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FDV303N
Active
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
SOT-23
Small Signal
Logic
0
Single
0
25
-
8
1
0.68
0.35
600
450
2.3
-
50
0.45
-
28
9
$0.0493
More Details
FDV303N-F169
Obsolete
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
SOT-23-3/5
Small Signal
Logic
0
Single
0
25
-
8
8
0.68
0.35
600
450
2.3
-
50
0.45
-
28
9
Price N/A
More Details
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