方案
按技术分类
设计
此类 N 沟道增强型场效应晶体管是使用高单元密度的 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻。此器件专为使用一个锂电池或三个镉电池或 NMH 电池的电池电路应用而设计。它可在手机和寻呼机等紧凑型便携式电子设备中用作反相器,或者高效的微型分立 DC/DC 转换。此器件具有卓越的导通电阻性能,即使在低至 2.5V 的门极驱动电压中亦是如此。
应用
特性
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可订购器件:
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产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
FDV303N
Active
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
SOT-23
Small Signal
Logic
0
Single
0
25
-
8
1
0.68
0.35
600
450
2.3
-
50
0.45
-
28
9
$0.0493
More Details
FDV303N-F169
Obsolete
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
SOT-23-3/5
Small Signal
Logic
0
Single
0
25
-
8
8
0.68
0.35
600
450
2.3
-
50
0.45
-
28
9
Price N/A
More Details
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