MOSFETs | FDV303N

N 沟道，数字 FET，25V，0.68A，0.45Ω

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此类 N 沟道增强型场效应晶体管是使用高单元密度的 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻。此器件专为使用一个锂电池或三个镉电池或 NMH 电池的电池电路应用而设计。它可在手机和寻呼机等紧凑型便携式电子设备中用作反相器，或者高效的微型分立 DC/DC 转换。此器件具有卓越的导通电阻性能，即使在低至 2.5V 的门极驱动电压中亦是如此。

  • This product is general usage and suitable for many different applications.
  • • 25 V，0.68 A 连续电流，2 A 峰值。
  • RDS(ON) = 0.45 Ω @ VGS= 4.5 V
  • RDS(ON) = 0.6 Ω @ VGS= 2.7 V
    • 栅极驱动电平要求极低，从而可在 3 V 电路中直接运行。 VGS(th) < 1.0 V。
    • 栅-源齐纳二极管增强耐静电放电(ESD)能力。 >6kV人体模型。
    • 紧凑型工业标准 SOT-23 表面贴装封装。
    • TN0200T 和 TN0201T 的备选方案。
  • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V
  • Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
  • Compact industry standard SOT-23 surface mount package
  • Alternative to TN0200T and TN0201T

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDV303N

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Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

318

1

260

REEL

3000

N

25

-

N-Channel

Single

8

1

0.68

0.35

600

450

2.3

-

50

$0.0493

More Details

FDV303N-F169

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CAD Model

Pb

A

H

P

SOT-23 (TO-236)

318

1

260

REEL

3000

N

25

-

N-Channel

Single

8

8

0.68

0.35

600

450

-

-

50

Price N/A

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