Small Signal MOSFETs | FDZ193P

P 沟道，1.7V PowerTrench® WL-CSP MOSFET，-20V，-1A，90mΩ

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CAD Model

CAD模型

概览

FDZ193P 基于先进的 1.7V PowerTrench® 工艺和最新的“低螺距”WLCSP 封装工艺而设计，可最大程度缩小 PCB 空间和降低 rDS(on)。这种先进的 WLCSP MOSFET 体现了封装技术的突破，使得该器件能够将优异的传热特性、超小型封装、低门极电荷和低 rDS(on) 等诸多性能结合在一起。

  • This product is general usage and suitable for many different applications.
  • Battery Management
  • Load Switch
  • Battery Protection
  • VGS = -4.5V，ID = -1A时，rDS(on) = 90 mΩ（最大值）
  • VGS = -2.5V，ID = -1A时，rDS(on) = 130 mΩ（最大值）
  • VGS = -1.7V，ID = -1A时，最大rDS(on) = 300mΩ
  • 仅占1.5mm²的PCB空间，比2 x 2 BGA所占空间少50%
  • 超薄封装： 安装至PCB时，高度小于0.65 mm
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDZ193P

Contact Sales

Obsolete

CAD Model

Pb

A

H

P

WLCSP-6

567PW

1

260

REEL

5000

N

P-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Single

0

-20

90

12

-1.5

-1

1.9

NA

130

12

7

NA

-

-

-

-

Price N/A

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