方案
按技术分类
设计
FDZ193P 基于先进的 1.7V PowerTrench® 工艺和最新的“低螺距”WLCSP 封装工艺而设计,可最大程度缩小 PCB 空间和降低 rDS(on)。这种先进的 WLCSP MOSFET 体现了封装技术的突破,使得该器件能够将优异的传热特性、超小型封装、低门极电荷和低 rDS(on) 等诸多性能结合在一起。
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
FDZ193P
Obsolete
Pb
A
H
P
WLCSP-6
1
260
REEL
5000
N
P-Channel
PowerTrench® T1
NA
Small Signal
Logic
0
Single
0
-20
90
12
-1.5
-1
1.9
NA
130
12
7
NA
-
-
-
-
Price N/A
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