Silicon Carbide (SiC) Diodes | FFSH20120ADN

碳化硅肖特基二极管

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碳化硅肖特基二极管没有开关损耗、通过采用新型半导体材料（碳化硅）提供比硅二极管更高的系统效率，提供更高的工作频率、有助于提高功率密度和减少系统尺寸/成本。 其高可靠性确保浪涌或过压状况下的稳健运行

  • 最大节温 175 °C
  • 雪崩额定值 105 mJ
  • 高浪涌电流容量
  • 正温度系数
  • 无反向恢复/无正向恢复

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