IGBT,1200V,15A,NPT 沟槽

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该 1200V NPT IGBT 采用安森美半导体的专属沟槽设计和先进 NPT 技术,提供卓越导通和开关性能、高雪崩耐用性和轻松并联操作。该器件非常适合谐振或软开关应用,比如电感加热、微波炉

  • 消费型设备
  • NPT 沟道技术,正温度系数
  • 低饱和电压:VCE(sat)(典型值) = 1.9V@ IC = 15A 且 TC = 25°C
  • 低开关损耗:EOFF(典型值) = 0.6mJ(IC = 15A 且 TC = 25°C时)
  • 极度增强雪崩能力

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V(BR)CES Typ (V)

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FGA15N120ANTDTU-F109

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Pb

A

H

P

TO-3P-3L

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0

TUBE

450

N

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1200

-

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1.7

0.6

3

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27

120

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-

186

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