IGBT,1100V,50A,短路阳极

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安森美半导体的短路阳极沟槽 IGBT 采用先进的场截止沟槽和短路阳极技术,可为开关应用提供卓越的导通和开关性能。该器件适用于电磁炉和微波炉。

  • 内置反并联二极管,用于软开关应用
  • 大开关频率范围:10 kHz 至 50 kHz
  • 高温稳定性能(Tjmax = 175℃)
  • 低饱和压降:VCE(sat) = 2.06 V,需 IC = 50 A
  • 鲁棒性锅炉检测噪声抗扰度
  • 符合 RoHS 标准(无铅引脚电镀)

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Case Outline

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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Co-Packaged Diode

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FGA50S110P

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CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

-

1100

30

2.06

1.96

0.99

2.24

-

-

195

-

-

300

Yes

Price N/A

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