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FGB3245G2_F085 和 FGD3245G2 是使用安森美半导体的 EcoSPARK® 2 技术设计的 N 沟道 IGBT,有助于消除外部保护电路。该技术适用于在汽车点火系统的严酷环境中驱动线圈,在更高的运行温度下也能提供出色的 Vsat 和 SCIS 能源能力。逻辑电平门极输入具有 ESD 保护,以及一个集成式门极电阻。集成式齐纳电路会将 IGBT 的集极-射极电压限制在 450 V,可实现需要更高火花电压的系统。
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FGB3245G2-F085
Active
Pb
A
H
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D2PAK-3 / TO-263-2
1
260
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800
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450
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2600
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150
Yes
$1.6109
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