IGBTs | FGB40T65SP_F085

IGBT，650V，40A，场截止沟槽

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概览

FGH40T65SPD_F085 使用新颖的第三代场截止 IGBT 技术，具有低导通损耗和开关损耗的最佳性能，可在各种应用中实现高效能运行，同时提供 50V 的更高阻断电压和稳固的高电流开关可靠性。同时，该零件还具有并行运行的出色性能优势。

  • Aux. Inverter
  • Battery Discharge
  • PTC Heater
  • Hybrid Electrical Vehicle
  • Electrical Vehicle
  • 符合 AEC-Q101 标准
  • 低饱和电压： VCE(sat) = 2.0 V（典型值） @ IC = 40 A
  • 最高结温： TJ = 175°C
  • 紧密的参数分布
  • 正温度系数，易于并联运行
  • 部件 100% 进行动态检测（备注 1
  • 短路耐用性 >5 us @ 25°C
  • 快速开关
  • 与快速软恢复极快速二极管共封装
  • 符合 RoHS 标准

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Reference Price

FGB40T65SPD-F085

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

N

-

650

-

-

2

0.28

0.97

-

~NA~

36

5

~NA~

267

-

$1.9165

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