IGBT,650 V,40A,场截止沟槽

Favorite

概览

安森美半导体的新型场截止第 4 代 IGBT 系列采用新型场截止 IGBT 工艺,提供了卓越导通和开关性能,以及简便的并行运行。该器件非常适合谐振或软开关应用,比如电感加热和微波炉。

  • Induction Heating Application
  • Microwave Oven
  • 最大结温: TJ = 175°C
  • 正温度系数,易于并联运行
  • 高电流能力
  • 低饱和电压: VCE(sat) = 1.33 V(典型值) @ IC = 40 A
  • ILM(1)部件100%检测
  • 高输入阻抗
  • 紧密的参数分布
  • 符合 RoHS 标准
  • Low Conduction Loss Design for Soft Switching Application

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

搜寻

Close Search

产品:

1

分享

Product Groups:

Orderable Parts:

1

产品

状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH40T65UQDF-F155

Loading...

Obsolete

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

N

-

650

-

-

1.5

0.31

0.989

-

-

306

-

-

231

-

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :