The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
特性
优势
Low Forward Voltage Drop
Low Power Loss/High Efficiency
Small Compact Surface Mountable Package with J-Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Stress Protection
This is a Pb-Free Device
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 70 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
Shipped in 12mm Tape, 5000 Units per 13 inch Reel
Polarity: Cathode Band Indicated by Polarity Band
ESD Ratings: Machine Model = C, Human Body Model = 3B
Device Meets MSL1 Requirements
AEC-Q101 Qualified and PPAP Capable
NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements