双路 4 输入 NAND 门极

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概览

此类双路 4 输入 NAND 门极是在单片结构中使用 P 和 N 沟道增强模式器件构建的(互补 MOS)。其主要用途是需要低功耗和/或高抗扰度的场合。

  • Supply Voltage Range = 3.0 Vdc to 18 Vdc
  • All Outputs Buffered
  • Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range.
  • Double Diode Protection on All Inputs
  • Pin-for-Pin Replacements for Corresponding CD4000 Series B Suffix Devices
  • Pb-Free Packages are Available*

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Type

Channels

VCC Min (V)

VCC Max (V)

tpd Max (ns)

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MC14012BDG

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Active

CAD Model

Pb

A

H

P

SOIC-14

1

260

TUBE

55

N

NAND

2

3

18

130

null

$0.2376

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MC14012BDR2G

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Active

CAD Model

Pb

A

H

P

SOIC-14

1

260

REEL

2500

N

NAND

2

3

18

130

null

$0.1847

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NLV14012BDG

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CAD Model

Pb

A

H

P

SOIC-14

1

260

TUBE

55

N

NAND

2

3

18

null

null

Price N/A

More Details

NLV14012BDR2G

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Active

CAD Model

Pb

A

H

P

SOIC-14

1

260

REEL

2500

Y

NAND

2

3

18

null

null

$0.1847

More Details

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