方案
按技术分类
设计
B 系列逻辑门极是在单片结构中使用 P 和 N 沟道增强模式器件构建的(互补 MOS)。其主要用途是需要低功耗和/或高抗扰度的场合。
特性
如需购买产品或样品,请先登录您的安森美账号。
搜寻
Close Search
产品:
7
分享
排序方式
产品系列:
┗
可订购器件:
7
产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Type
Channels
VCC Min (V)
VCC Max (V)
tpd Max (ns)
IO Max (mA)
Reference Price
MC14071BDG
More Details
MC14071BDR2G
More Details
MC14071BDTG
More Details
MC14071BDTR2G
More Details
NLV14071BDG
More Details
NLV14071BDR2G
More Details
NLV14071BDTR2G
More Details
Show More
1-25 of 25
Products per page
Jump to :
分享
导出
Rows
Printer Friendly Version
PDF Format
Excel Format
CSV Format
To proceed order you need to accept Terms
Hello, your current browser settings are preventing us from processing your submission. You can adjust your browser settings and reload the page or you can submit an email directly to inside.sales@onsemi.com
You might also try the following:
Thank you for submitting the contact sales form. Your request is on its way to our sales support team!
We thank you for your interest in onsemi and are working on your request. Our sales support team will respond to your request within two business days.