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MC14093B 施密特触发器在一个单片结构中使用 MOS P 沟道和 N 沟道增强模式器件构造。这些器件主要用途是需要低功耗和/或高抗扰度的场合。MC14093B 可以替代 MC14011B 四路 2 输入 NAND 门极,实现更高抗扰度,或对慢慢变化的波形进行“方形整形”。
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MC14093BDG
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MC14093BDR2G
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MC14093BDTR2G
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NLV14093BDG
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NLV14093BDR2G
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NLV14093BDTR2G
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