单 IGBT 驱动器

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MC33153 专门设计为用于大功率应用的 IGBT 驱动器,包括电感电机控制、无电刷直流电机控制和不中断电源。尽管设计为驱动分立和模块 IGBT,但此器件提供了用于驱动功率 MOSFET 和双极晶体管的成本高效的方案。器件保护功能包括去饱和或过电流感应和欠电压检测。此类器件采用双列直插和表面贴装封装,包括以下功能:

  • High Current Output Stage: 1.0 A Source/2.0 A Sink
  • Protection Circuits for Both Conventional and Sense IGBTs
  • Programmable Fault Blanking Time
  • Protection against Overcurrent and Short Circuit
  • Undervoltage Lockout Optimized for IGBT's
  • Negative Gate Drive Capability
  • Cost Effectively Drives Power MOSFETs and Bipolar Transistors
  • Pb-Free Packages are Available

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Case Outline

MSL Type

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Power Switch

Number of Outputs

Topology

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Vin Max (V)

VCC Max (V)

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Fall Time (ns)

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Drive Sink Current Typ (A)

Turn On Prop. Delay Typ (ns)

Turn Off Prop. Delay Typ (ns)

Delay Matching

Reference Price

MC33153DG

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

TUBE

98

Y

IGBT

1

Single

Non-Isolated

20

20

17

17

1

2

80

120

-

$1.0488

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MC33153DR2G

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

IGBT

1

Single

Non-Isolated

20

20

17

17

1

2

80

120

-

$0.897

More Details

MC33153PG

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Active

CAD Model

Pb

A

H

P

PDIP-8

NA

0

TUBE

50

Y

IGBT

1

Single

Non-Isolated

20

20

17

17

1

2

80

120

-

$0.5297

More Details

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