单 P 沟道,功率 MOSFET,-12V,-3.5A,69mΩ

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此功率 MOSFET 是使用安森美半导体的沟槽技术生产的,专门用于最大程度减小门极电荷,降低导通电阻。此器件适用于具有低门极电荷驱动或低导通电阻要求的应用。

  • LED Current Balance SW
  • Load Switch
  • LED-TV
  • Voice Recorder
  • Portable Wireless Equipment
  • ESD Diode-Protected Gate
  • 0.9V drive
  • Ultra Small Package MCPH3 (2.0mm x 2.1mm x 0.85mmt)
  • Low On-Resistance
  • Pb-Free, Halogen Free and RoHS compliance

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状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

MCH3383-TL-H

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Last Shipments

CAD Model

Pb

A

H

P

SC-70FL / MCPH-3

1

260

REEL

3000

N

-12

-

P-Channel

Single

5

0.8

-3.5

1

69

-

-

6.2

1010

Price N/A

More Details

MCH3383-TL-W

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Last Shipments

CAD Model

Pb

A

H

P

SC-70FL / MCPH-3

1

260

REEL

3000

N

-12

-

P-Channel

Single

5

0.8

-3.5

1

69

-

-

6.2

1010

Price N/A

More Details

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