Darlington Transistors | MJE802

4.0 A, 80 V NPN Darlington Bipolar Power Transistor

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概览

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices.

  • High DC Current Gain -
    hFE = 2000 (Typ) @ IC = 2.0 Adc
  • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
  • Choice of Packages -
    MJE700 and MJE800 series
  • Pb-Free Packages are Available

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Product services, tools and other useful resources related to MJE802

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MSL Temp (°C)

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Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

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MJE802

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Obsolete

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CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

4

80

2.5

0.75

-

-

Price N/A

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MJE802G

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Obsolete

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CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

4

80

2.5

0.75

-

-

Price N/A

More Details

MJE803G

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Last Shipments

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CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

4

80

2.8

0.75

-

-

Price N/A

More Details

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可靠性数据

Die Related Summary Data

Device: MJE802G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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