NPN Bipolar Power Transistor

概览

The Bipolar Power Transistor is designed for general purpose amplifier and switching applications. The MJF31C (NPN) and MJF32C (PNP) are complementary devices.

  • Collector–Emitter Saturation Voltage
    –VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
  • Collector–Emitter Sustaining Voltage
    – VCEO(sus) = 100 Vdc (Min)
  • High Current Gain – Bandwidth Product
    fT = 3.0 MHz (Min) @ IC = 500 mAdc
  • UL Recognized, File #E69369, to 3500 VRMS Isolation
  • Pb-Free Packages are Available

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

Obsolete

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

50

N

-

General Purpose

1.2

3

-

-

-

-

-

10

50

3

30

Price N/A

More Details

Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

50

N

NPN

General Purpose

1.2

3

100

100

5

-

1.8

10

50

3

30

$0.5019

More Details

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