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MMBFJ309L: N-Channel JFET Transistor

Overview
Specifications
Packages
Datasheet: JFET VHF/UHF Amplifier Transistor
Rev. 7 (108kB)
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Product Overview
产品说明
This N-Channel JFET device is designed for high frequency amplifiers and oscillators.
特性
 
  • SOT-23 Surface Mount Package Saves Board Space
  • Drain and Source are interchangable
  • Low rDS(on) Provides Higher Efficiency and Extends Battery Life
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
技术文档及设计资源
仿真模型 (4) 封装图纸 (1)
数据表 (1)  
供货情况和样品
产品
状况
Compliance
具体说明
封装
MSL*
容器
预算价格 (1千个数量的单价)
类型
外形
类型
数量
MMBFJ309LT1G Active
AEC Qualified
Pb-free
Halide free
N-Channel JFET Transistor SOT-23-3 318-08 1 Tape and Reel 3000 $0.1453
SMMBFJ309LT1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
N-Channel JFET Transistor SOT-23-3 318-08 1 Tape and Reel 3000 $0.176
MMBFJ309LT1 Last Shipments
N-Channel JFET Transistor SOT-23-3 318-08 1 Tape and Reel 3000  
表面贴装器件的潮湿敏感度等级(MSL)(260°C回流温度时测量无铅,235°C回流温度时测量含铅)
市场订货至交货的时间(周) : 2 to 4
Arrow   (Sat Jul 11 07:39:51 MST 2015) : 7251
Avnet   (2015-07-09) : >1K
Digikey   (2015-07-09) : >10K
Mouser   (2015-07-09) : >1K
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory
Datasheet: JFET VHF/UHF Amplifier Transistor
Rev. 7 (108kB)
»浏览可靠性数据
»查看材料成分
»产品更改通知 (8)
Product Overview

Product Compliance Status Description Channel Polarity IDSS Min (uA) IDSS Max (uA) V(BR)GSS Min (V) Ciss Max (pF) Crss Max (pF) Package Type
 AEC Qualified 
 Pb-free 
 Halide free 
 Active     N-Channel JFET Transistor   N-Channel   12000   30000   25   5   2.5   SOT-23-3 
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     N-Channel JFET Transistor   N-Channel   12000   30000   25   5   2.5   SOT-23-3 
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