功率 MOSFET,50V,2A,300mΩ,双 N 沟道,SO-8

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这些微型表面贴装 MOSFET 具有超低 RDS(on) 和真正逻辑电平性能。它们能够承受雪崩和换相模式下的高能量,漏极-源极二极管具有短逆向恢复时间。这些器件设计用于高能效至关重要的低电压、高速开关应用。典型应用为 DC-DC 转换器以及便携式和电池供电产品中的功率管理,如计算机、打印机、手机和无绳电话。它们还可用于大容量存储产品(例如磁盘驱动器和磁带驱动器)中的低压电机控制。雪崩能量专用于消除设计中的猜测,其中感应负载可进行切换,并提供额外的安全裕度,以抵御意外的电压瞬变。

  • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
  • Logic Level Gate Drive - Can Be Driven by Logic ICs
  • Miniature SO-8 Surface Mount Package - Saves Board Space
  • Diode Is Characterized for Use In Bridge Circuits
  • Diode Exhibits High Speed
  • Avalanche Energy Specified
  • Mounting Information for SO-8 Package Provided
  • IDSS Specified at Elevated Temperature
  • Pb-Free Package is Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

MMDF1N05ER2

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

235

REEL

2500

N

50

300

N-Channel

Dual

20

3

2

2

-

500

-

12.5

330

Price N/A

More Details

MMDF1N05ER2G

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

50

300

N-Channel

Dual

20

3

2

2

-

500

-

12.5

330

Price N/A

More Details

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