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This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
MTB30P06VT4G
Pb
A
H
P
D2PAK-3 / TO-263-2
1
260
REEL
800
N
P-Channel
PowerTrench® T1
NA
Low-Medium Voltage
Standard
0
Single
0
60
80
15
4
30
125
-
-
-
54
1562
-
965
524
124
Price N/A
More Details
MTBV30P06VT4G
Pb
A
H
P
D2PAK-3 / TO-263-2
1
260
REEL
800
N
P-Channel
PowerTrench® T1
NA
Low-Medium Voltage
Standard
0
Single
0
60
80
15
4
30
125
-
-
-
54
1562
-
965
524
124
Price N/A
More Details
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