Low/Medium Voltage MOSFETs | MTD6N20E

功率 MOSFET，200V，6A，700mΩ，单 N 沟道，DPAK

Obsolete

数据表

购买

概览

此高级功率 MOSFET 适用于承受雪崩和换相模式下的高能量。新型能效设计还提供了具有快速恢复时间的漏极-源极二极管。此类器件专用于电源、转换器和 PWM 电机控制中的低电压、高速开关应用，尤其适用于二极管速度和换相安全运行区域非常关键的桥式电路，可针对非预期的瞬变电压提供附加安全裕度。

  • Avalanche Energy Specified
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

MTD6N20ET4

Contact Sales

Obsolete

CAD Model

Pb

A

H

P

DPAK-3

369C

1

235

REEL

2500

N

N-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Standard

0

Single

0

200

700

20

4

6

50

-

-

-

13.7

342

-

0.74

92

27

Price N/A

More Details

MTD6N20ET4G

Contact Sales

Obsolete

CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Standard

0

Single

0

200

700

20

4

6

50

-

-

-

13.7

342

-

0.74

92

27

Price N/A

More Details

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