串行 SRAM 内存,256-kb,1.8 V

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安森美半导体串行 SRAM 系列包括多款集成存储器件,其中就包括这款 256 Kb 串行访问的静态随机访问存储器,内部组织为 8 K 个词,每个词 32 位。此类器件采用安森美半导体先进的 CMOS 工艺制造,速度快、功耗低。此类器件通过一个单芯片选择 (CS) 输入运行,并使用一个简单的串行外围接口 (SPI) 串行总线。单个数据输入和数据输出行与时钟一起用于访问器件中的数据。N25S818HA 器件包括暂停引脚,可实现与要暂停器件的通信。暂停后,输入转换将忽略。此类器件可在 −40°C 至 +85°C 的宽广温度范围内运行,采用若干标准封装。

  • 1.7 to 1.95 V power supply range
  • Very low standby current - typical Isb as low as 200 nA
  • Very low operating current - as low as 3 mA
  • Simple memory control: single chip select (CS), serial input (SI) and serial output (SO)
  • Flexible operating modes: word read and write, page mode (32 word page), and burst mode (full array)
  • 32 K x 8 bit organization
  • Self timed write cycles
  • Built-in write protection (CS high)
  • HOLD pin for pausing communication

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N25S818HAS21I

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Active

CAD Model

Pb

A

H

P

SOIC-8

3

260

TUBE

96

Y

Serial

256 kb

32k x 8

16

1.7

1.95

0.2

$1.1259

More Details

N25S818HAT21I

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Active

CAD Model

Pb

A

H

P

TSSOP-8

3

260

TUBE

100

Y

Serial

256 kb

32k x 8

16

1.7

1.95

0.2

$1.1259

More Details

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