功率 MOSFET / IGBT 驱动器,单输入,半桥

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NCP5111 是一款高电压功率门极驱动器驱动器,提供两种输出,用于半桥配置中的 2 个 N 沟道功率 MOSFET 或 IGBT 的直接驱动。它使用自举技术来确保高压侧电源开关的正确驱动。

  • Half Bridge Power Converters
  • High Voltage Range: Up to 600V
  • dV/dt Immunity ±50 V/ns
  • Gate Drive Supply Range from 10 V to 20 V
  • High and Low Drive Outputs
  • Output Source / Sink Current Capability 250 mA / 500 mA
  • 3.3 V and 5 V Input Logic Compatible
  • Up to Vcc Swing on Input Pins
  • Matched Propagation Delays Between Both Channels
  • One Input with Internal Fixed Dead Time (650 ns)
  • Under Vcc LockOut (UVLO) for Both Channels
  • Pin to Pin Compatible with Industry Standards

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CAD Models

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Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Power Switch

Number of Outputs

Topology

Isolation Type

Vin Max (V)

VCC Max (V)

Rise Time (ns)

Fall Time (ns)

Drive Source Current Typ (A)

Drive Sink Current Typ (A)

Turn On Prop. Delay Typ (ns)

Turn Off Prop. Delay Typ (ns)

Delay Matching

Reference Price

NCP5111DR2G

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

MOSFET / IGBT

2

High-Low

Junction Isolation

600

23

85

35

0.25

0.5

750

100

60

$0.4637

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NCP5111PG

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Obsolete

CAD Model

Pb

A

H

P

PDIP-8

1

260

TUBE

50

N

MOSFET / IGBT

2

High-Low

Junction Isolation

600

23

85

35

0.25

0.5

750

100

60

Price N/A

More Details

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