NCP5111 是一款高电压功率门极驱动器驱动器,提供两种输出,用于半桥配置中的 2 个 N 沟道功率 MOSFET 或 IGBT 的直接驱动。它使用自举技术来确保高压侧电源开关的正确驱动。
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Rise Time (ns)
Fall Time (ns)
Drive Source Current Typ (A)
Drive Sink Current Typ (A)
Turn On Prop. Delay Typ (ns)
Turn Off Prop. Delay Typ (ns)
Delay Matching
Reference Price
NCP5111DR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
Y
MOSFET / IGBT
2
High-Low
Junction Isolation
600
23
85
35
0.25
0.5
750
100
60
$0.4637
More Details
Obsolete
Pb
A
H
P
PDIP-8
1
260
TUBE
50
N
MOSFET / IGBT
2
High-Low
Junction Isolation
600
23
85
35
0.25
0.5
750
100
60
Price N/A
More Details
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可靠性数据
Die Related Summary Data
Device: NCP5111DR2G
Equivalent to wafer fab process: VHVIC
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
VHVIC
2
2577173853
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)