Gate Drivers | NCP5181

MOSFET / IGBT 驱动器，高电压，高压和低压侧，双输入

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CAD Model

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概览

NCP5181 是一款高电压功率 Mosfet 驱动器，提供两种输出，用于半桥配置（或任何其他高压侧 + 低压侧配置）的 2 个 N 沟道功率 MOSFET 的直接驱动。它使用自举技术来确保高压侧电源开关的正确驱动。该驱动器使用 2 个独立输入可适应任何拓扑结构（包括半桥、不对称半桥、有源箝位和全桥）。

  • Bridge Inverter for UPS systems
  • High Power Energy Management
  • Half-bridge Power Converters
  • Full-bridge Converters
  • Any Complementary Drive Converters (asymmetrical halfbridge, active clamp)
  • High Voltage Range: up to 600 V
  • dV/dt Immunity 50 V/nsec
  • Gate Drive Supply Range from 10 V to 20 V
  • High and Low DRV Outputs
  • Output Source / Sink Current Capability 1.1 A / 2.4 A
  • 3.3 V and 5 V Input Logic Compatible
  • Up to Vcc Swing on Input Pins
  • Matched Propagation Delays between Both Channels
  • Outputs in Phase with the Inputs
  • Independent Logic Inputs to Accommodate All Topologies
  • Under VCC LockOut (UVLO) for Both Channels
  • Pin to Pin Compatible with IR2181(S)

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Power Switch

Number of Outputs

Topology

Isolation Type

Vin Max (V)

VCC Max (V)

Rise Time (ns)

Fall Time (ns)

Drive Source Current Typ (A)

Drive Sink Current Typ (A)

Turn On Prop. Delay Typ (ns)

Turn Off Prop. Delay Typ (ns)

Delay Matching

Reference Price

NCP5181DR2G

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

751-07

1

260

REEL

2500

N

MOSFET

2

High-Low

Junction Isolation

600

20

40

40

1.4

2.2

100

100

35

Price N/A

More Details

NCP5181PG

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Obsolete

CAD Model

Pb

A

H

P

PDIP-8

626-05

NA

0

TUBE

50

N

MOSFET

2

High-Low

Junction Isolation

600

20

20

20

1.4

2.2

100

100

35

Price N/A

More Details

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