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NCP5183 是一款高电压高电流 功率 MOSFET 驱动器, 提供两个输出,用于驱动 2 个组织为半桥(或任何其他高压侧 + 低压侧)配置的 N 沟道功率 MOSFET。 它使用自举技术来确保高压侧电源开关的恰当驱动。 该驱动器使用 2 个独立输入可适应任何拓扑结构(包括半桥、不对称半桥、有源箝位和全桥)。
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Number of Outputs
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VCC Max (V)
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Reference Price
NCP5183DR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
Y
MOSFET / IGBT
2
High-Low
Junction Isolation
600
18
12
12
4.3
4.3
120
120
50
$1.2016
More Details
NCV5183DR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
Y
MOSFET / IGBT
2
High-Low
Junction Isolation
600
18
12
12
4.3
4.3
120
120
50
$1.012
More Details
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