方案
按技术分类
设计
此 P 沟道增强型电场效应晶体管是使用 Fairchild 的高单元密度 DMOS 专属技术生产的。这种极高密度工艺可最大程度地降低导通电阻,提供了坚固可靠的性能和快速的开关。NDS0605 可用于最高要求 0.18A DC 的大多数应用,可以提供高达 1 A 的脉冲电流,且工作量极小。此产品尤其适用于需要低电流高压侧开关的低压应用。
如需购买产品或样品,请先登录您的安森美账号。
搜寻
Close Search
产品:
2
分享
排序方式
产品系列:
┗
可订购器件:
2
产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
NDS0605
Active
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
N
P-Channel
PowerTrench® T1
SOT-23
Small Signal
Logic
0
NA
0
-60
5000
±20
-3
-0.18
0.36
-
7500
-
1.8
79
51
-
1130
380
$0.0357
More Details
NDS0605-F169
Last Shipments
Pb
A
H
P
SOT-23-3
1
260
REEL
3000
N
P-Channel
PowerTrench® T1
SOT-23-3
Small Signal
Logic
0
NA
0
-60
5000
±20
-3
-0.18
0.36
-
7500
-
1.8
79
51
-
1130
380
Price N/A
More Details
Show More
1-25 of 25
Products per page
Jump to :
分享
导出
Rows
Printer Friendly Version
PDF Format
Excel Format
CSV Format
To proceed order you need to accept Terms
Hello, your current browser settings are preventing us from processing your submission. You can adjust your browser settings and reload the page or you can submit an email directly to inside.sales@onsemi.com
You might also try the following:
Thank you for submitting the contact sales form. Your request is on its way to our sales support team!
We thank you for your interest in onsemi and are working on your request. Our sales support team will respond to your request within two business days.