Small Signal MOSFETs | NDS0605

P 沟道增强型场效应晶体管，-60V，-0.18A，5Ω

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CAD Model

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概览

此 P 沟道增强型电场效应晶体管是使用 Fairchild 的高单元密度 DMOS 专属技术生产的。这种极高密度工艺可最大程度地降低导通电阻，提供了坚固可靠的性能和快速的开关。NDS0605 可用于最高要求 0.18A DC 的大多数应用，可以提供高达 1 A 的脉冲电流，且工作量极小。此产品尤其适用于需要低电流高压侧开关的低压应用。

  • This product is general usage and suitable for many different applications.
  • -0.18 A, -60 V. RDS(ON) = 5 Ω @ VGS= -10 V.
  • 电压控制的P沟道小信号开关。
  • 高密度单元设计可实现极低的 RDS(ON)。
  • 高饱和电流。

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDS0605

Contact Sales

Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

NA

0

-60

5000

±20

-3

-0.18

0.36

-

7500

-

1.8

79

51

-

1130

380

$0.0357

More Details

NDS0605-F169

Contact Sales

Last Shipments

CAD Model

Pb

A

H

P

SOT-23-3

318BM

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23-3

Small Signal

Logic

0

NA

0

-60

5000

±20

-3

-0.18

0.36

-

7500

-

1.8

79

51

-

1130

380

Price N/A

More Details

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